9,647 scholarship-phd-electrical-power-engineering "University of Washington" scholarships
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Université Grenoble Alpes and Swansea University. Embark on a transformative journey with our PhD scholarship in Power Electronics. This research focuses on wide band gap semiconductors, a vital technology for
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Power Electronics. This research focuses on wide band gap semiconductors, a vital technology for energy processing and distribution. This PhD studentship is an opportunity to contribute to a pioneering
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://www.swansea.ac.uk/postgraduate/scholarships/research/electronic-electri… Contact City Swansea Website https://www.swansea.ac.uk/postgraduate/scholarships/research/electronic-electrical-engineering-epsrc-su-phd
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PhD Scholarship in Assistive Technology and Disability Job No.: 665632 Location: Clayton or Caulfield campus Employment Type: Full-time (expected to be full-time but may be part-time if health
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What you'll receive You'll receive: a stipend scholarship of $33,637 per annum for a maximum duration of 3.5 years while undertaking a QUT PhD. The duration includes an extension of up to 6 months
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of the Electrical Energy Systems group. Requirements Specific Requirements A master's degree (or an equivalent university degree) in Electrical Engineering. A research-oriented attitude. Ability to work in an
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Irène Curie Fellowship No Department(s) Electrical Engineering Reference number V36.7479 Job description Do you want to explore how the electric power system and their markets can change from
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bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) for power electronic applications are well documented. High voltage GaN is an emerging semiconductor technology that has recently
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Website https://www.swansea.ac.uk/postgraduate/scholarships/research/electronic-electrical-engineering-epsrc-silvaco-phd-new-2024-rs608.php?utm_source=euraxess&utm_medium=scholarship&utm_campaign
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@swansea.ac.uk ) Professor Mike Jennings Aligned programme of study: PhD in Electronic and Electrical Engineering Mode of study: Full-time Project description: The wide bandgap (WBG) power MOSFET is more prone to